取消
In the electronics industry, Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are two widely used semiconductor devices. They are applied extensively in various electronic devices, such as power management, motor drives, signal processing, and other fields. This article will focus on the IRFS7730-7PPBF MOSFET product manufactured by Infineon, providing a detailed analysis of its key features and specifications.
FETs are semiconductor devices that control the flow of current through an electric field. They utilize the field effect to control the conductive channel's switching. FETs offer high input impedance, low noise, and low power consumption. MOSFETs, a type of FET, feature a metal-oxide-semiconductor structure as the control layer for the conductive channel, providing better switching performance and stability.
MOSFETs are classified into N-channel and P-channel types, with N-channel MOSFETs being more widely used in the electronics industry. The working principle of an N-channel MOSFET is to control the conductive channel between the drain and source through the gate voltage. When the gate voltage exceeds the threshold voltage, the conductive channel forms, allowing current to pass; when the gate voltage is below the threshold voltage, the conductive channel closes, blocking the current.
IRFS7730-7PPBF is an N-channel power MOSFET produced by Infineon, characterized by high performance, high reliability, and high power density. Here are its key features:
High Power Handling Capability: The maximum drain-source voltage of IRFS7730-7PPBF is 75V, and the maximum continuous drain current is 269A, making it excel in high-power applications.
Low On-Resistance: The drain-source on-resistance of this product is only 0.0017 ohms, helping to reduce conduction losses and improve system efficiency.
Fast Switching Speed: The rise time and fall time of IRFS7730-7PPBF are 90ns and 91ns, respectively, enabling it to respond quickly in high-frequency applications.
High Stability: The product adopts advanced production processes and materials, exhibiting excellent thermal stability and long-term reliability.
Package Form: IRFS7730-7PPBF uses the TO-263-7 package form, featuring a compact structure and good heat dissipation performance.
Environmental Characteristics: This product complies with RoHS standards, does not contain harmful substances, and meets environmental requirements.
III. Specifications of IRFS7730-7PPBF
Here are the main specifications of IRFS7730-7PPBF, which are crucial for understanding the product's performance and applicable scope:
Channel Type: N-channel
Maximum Continuous Drain Current (Ids): 269A
Maximum Drain-Source Voltage (Vds): 75V
Drain-Source On-Resistance (Rds On): 0.0017 ohms
Gate-Source Threshold Voltage (Vgs th): 3.7V
Maximum Gate-Source Voltage (Vgs): -20V to +20V
Maximum Power Dissipation (Pd): 375W
Package Type: TO-263-7
Number of Pins: 7
Operating Temperature Range: -55°C to +175°C
Input Capacitance (Ciss): 13970pF @25V(Vds)
Rise Time: 90ns
Fall Time: 91ns
Material: Silicon
Mounting Style: Surface Mount
The high power handling capability, low on-resistance, and fast switching speed of IRFS7730-7PPBF make it an ideal choice for various applications. For example, in power management systems, it can serve as an efficient switching element, reducing energy losses and improving system efficiency. In motor drive circuits, it can quickly respond to control signals, achieving precise motor control. Additionally, IRFS7730-7PPBF is suitable for industrial automation, electric vehicles, and renewable energy fields.
Compared with similar products, IRFS7730-7PPBF offers the following advantages:
High Performance: With low on-resistance and fast switching speed, it provides higher system efficiency and response speed.
High Reliability: Adopting advanced production processes and materials ensures long-term stable operation.
Easy Installation: The TO-263-7 package form facilitates easier installation and offers good heat dissipation performance.
Environmentally Friendly and Energy-Saving: Complying with RoHS standards helps reduce environmental pollution and energy consumption.
In summary, IRFS7730-7PPBF is a high-performance, high-reliability, and high-power-density N-channel power MOSFET. Its key features and specifications make it excel in various applications, especially in power management, motor drives, and industrial automation. By understanding the key features and specifications of IRFS7730-7PPBF, we can better select and use this excellent MOSFET product, contributing to the performance enhancement and energy efficiency optimization of electronic devices.
ICCOMING Electronics is a hybrid IC distributor of electronic components.
Established in March 2020 ，We have excellent global sales team and perfect sales network.We also have logistics warehouses in Hong Kong and Shenzhen.Our company is characterized by high-quality elite team and the business of our company has scattered more than 30 countries in all regions of the world.
In the electronics industry, Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are two widely used semiconductor devices. They are applied extensively in various electronic devices, such as power management, motor drives, signal processing, and other fields. This article will focus on the IRFS7730-7PPBF MOSFET product manufactured by Infineon, providing a detailed analysis of its key features and specifications.
FETs are semiconductor devices that control the flow of current through an electric field. They utilize the field effect to control the conductive channel's switching. FETs offer high input impedance, low noise, and low power consumption. MOSFETs, a type of FET, feature a metal-oxide-semiconductor structure as the control layer for the conductive channel, providing better switching performance and stability.
MOSFETs are classified into N-channel and P-channel types, with N-channel MOSFETs being more widely used in the electronics industry. The working principle of an N-channel MOSFET is to control the conductive channel between the drain and source through the gate voltage. When the gate voltage exceeds the threshold voltage, the conductive channel forms, allowing current to pass; when the gate voltage is below the threshold voltage, the conductive channel closes, blocking the current.
IRFS7730-7PPBF is an N-channel power MOSFET produced by Infineon, characterized by high performance, high reliability, and high power density. Here are its key features:
High Power Handling Capability: The maximum drain-source voltage of IRFS7730-7PPBF is 75V, and the maximum continuous drain current is 269A, making it excel in high-power applications.
Low On-Resistance: The drain-source on-resistance of this product is only 0.0017 ohms, helping to reduce conduction losses and improve system efficiency.
Fast Switching Speed: The rise time and fall time of IRFS7730-7PPBF are 90ns and 91ns, respectively, enabling it to respond quickly in high-frequency applications.
High Stability: The product adopts advanced production processes and materials, exhibiting excellent thermal stability and long-term reliability.
Package Form: IRFS7730-7PPBF uses the TO-263-7 package form, featuring a compact structure and good heat dissipation performance.
Environmental Characteristics: This product complies with RoHS standards, does not contain harmful substances, and meets environmental requirements.
III. Specifications of IRFS7730-7PPBF
Here are the main specifications of IRFS7730-7PPBF, which are crucial for understanding the product's performance and applicable scope:
Channel Type: N-channel
Maximum Continuous Drain Current (Ids): 269A
Maximum Drain-Source Voltage (Vds): 75V
Drain-Source On-Resistance (Rds On): 0.0017 ohms
Gate-Source Threshold Voltage (Vgs th): 3.7V
Maximum Gate-Source Voltage (Vgs): -20V to +20V
Maximum Power Dissipation (Pd): 375W
Package Type: TO-263-7
Number of Pins: 7
Operating Temperature Range: -55°C to +175°C
Input Capacitance (Ciss): 13970pF @25V(Vds)
Rise Time: 90ns
Fall Time: 91ns
Material: Silicon
Mounting Style: Surface Mount
The high power handling capability, low on-resistance, and fast switching speed of IRFS7730-7PPBF make it an ideal choice for various applications. For example, in power management systems, it can serve as an efficient switching element, reducing energy losses and improving system efficiency. In motor drive circuits, it can quickly respond to control signals, achieving precise motor control. Additionally, IRFS7730-7PPBF is suitable for industrial automation, electric vehicles, and renewable energy fields.
Compared with similar products, IRFS7730-7PPBF offers the following advantages:
High Performance: With low on-resistance and fast switching speed, it provides higher system efficiency and response speed.
High Reliability: Adopting advanced production processes and materials ensures long-term stable operation.
Easy Installation: The TO-263-7 package form facilitates easier installation and offers good heat dissipation performance.
Environmentally Friendly and Energy-Saving: Complying with RoHS standards helps reduce environmental pollution and energy consumption.
In summary, IRFS7730-7PPBF is a high-performance, high-reliability, and high-power-density N-channel power MOSFET. Its key features and specifications make it excel in various applications, especially in power management, motor drives, and industrial automation. By understanding the key features and specifications of IRFS7730-7PPBF, we can better select and use this excellent MOSFET product, contributing to the performance enhancement and energy efficiency optimization of electronic devices.
ICCOMING Electronics is a hybrid IC distributor of electronic components.
Established in March 2020 ，We have excellent global sales team and perfect sales network.We also have logistics warehouses in Hong Kong and Shenzhen.Our company is characterized by high-quality elite team and the business of our company has scattered more than 30 countries in all regions of the world.
